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TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America, Inc.

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TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America, Inc.

Name: TH58NVG3S0HTAI0 IC FLASH 8GBIT PARALLEL 48TSOP I Kioxia America Inc
Brand: Kioxia America, Inc.
Price: 1 USD

Brand Name : Kioxia America, Inc.

Model Number : TH58NVG3S0HTAI0

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Non-Volatile

Memory Format : FLASH

Technology : FLASH - NAND (SLC)

Memory Size : 8Gbit

Memory Organization : 1G x 8

Memory Interface : Parallel

Clock Frequency : -

Write Cycle Time - Word, Page : 25ns

Access Time : 25 ns

Voltage - Supply : 2.7V ~ 3.6V

Operating Temperature : -40°C ~ 85°C (TA)

Mounting Type : Surface Mount

Package / Case : 48-TFSOP (0.724", 18.40mm Width)

Supplier Device Package : 48-TSOP I

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Product Details

[Toshiba]

2GBIT (256M u 8BITS) CMOS NAND E2PROM

DESCRIPTION

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks. The device has a 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).
The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and data input / output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density nonvolatile memory data storage.

FEATURES

• Organization
Memory cell allay 2112 u 64K u 8 u 2
Register 2112 u 8
Page size 2112bytes
Block size (128K 4K) bytes
• Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
• Mode control
Serial input㧛output
Command control
• Powersupply VCC 2.7 V to 3.6 V
• Program/Erase Cycles 1E5 Cycles(With ECC)
• Access time
Cell array to register 25 μs max
Serial Read Cycle 50 ns min
• Operating current
Read (50 ns cycle) 10 mA typ.
Program (avg.) 10 mA typ.
Erase (avg.) 10 mA typ.
Standby 50 μA max
• Package
TSOP I 48-P-1220-0.50(Weight : 0.53 g typ.)

Specifications

Attribute	Attribute Value
Manufacturer	TOSHIBA
Product Category	Memory ICs
Series	-
Packaging	Tray
Package-Case	48-TFSOP (0.724", 18.40mm Width)
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel/Serial
Voltage-Supply	2.7 V ~ 3.6 V
Supplier-Device-Package	48-TSOP I
Memory Capacity	8G (1G x 8)
Memory-Type	EEPROM - NAND
Speed	25ns
Format-Memory	EEPROM - Serial I/O Data Bus

Descriptions

NAND Flash Parallel 3.3V 8G-bit 1G x 8

EEPROM 3.3V, 8 Gbit CMOS NAND EEPROM

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